s m d ty p e w w w . k e x i n . c o m . c n 1 m os f e t p - ch an n el m osf et 2s j506s f e a tu r e s v d s ( v ) = - 3 0 v i d = - 1 0 a r d s ( o n ) 8 5 m ( v g s = - 1 0 v ) r d s ( o n ) 1 8 0 ( v g s = - 4 v ) a b s o l u te m a x i m u m ra ti n g s t a = 2 5 p a r a m e t e r s y m b o l r a t i n g u n i t d r a i n - s o u r c e v o l t a g e v d s - 3 0 g a t e - s o u r c e v o l t a g e v g s 2 0 c o n t i n u o u s d r a i n c u r r e n t i d - 1 0 p u l s e d d r a i n c u r r e n t n o t e . 1 ) i d m - 4 0 b o d y t o d r a i n d i o d e r e v e r s e d r a i n c u r r e n t i d r - 1 0 p o w e r d i s s i p a t i o n p d 2 0 w j u n c t i o n t e m p e r a t u r e t j 1 5 0 j u n c t i o n s t o r a g e t e m p e r a t u r e r a n g e t st g - 5 5 t o 1 5 0 v a n o t e . 1 : p w 1 0 u s , d u t y c y c l e 1 % e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = - 1 0 m a , v g s = 0 v - 3 0 g a t e - s o u r c e b r e a k d o w n v o l t a g e v g s s i g = 1 0 0 u a , v d s = 0 v 2 0 z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s v d s = - 3 0 v , v g s = 0 v - 1 0 u a g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 1 6 v 1 0 u a g a t e t o s o u r c e c u t o f f v o l t a g e v g s ( o f f ) v g s = - 1 0 v i d = - 1 m a - 1 - 2 v v g s = - 1 0 v , i d = - 5 a 8 5 v g s = - 4 v , i d = - 5 a 1 8 0 f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = - 1 0 v , i d = - 5 a 1 0 1 6 s i n p u t c a p a c i t a n c e c i ss 6 6 0 o u t p u t c a p a c i t a n c e c o ss 4 4 0 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 1 4 0 t u r n - o n d e l a y t i m e t d ( o n ) 1 2 t u r n - o n r i s e t i m e t r 6 5 t u r n - o f f d e l a y t i m e t d ( o f f ) 8 5 t u r n - o f f f a l l t i m e t f 6 5 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r i f = - 1 0 a , d i / d t = 5 0 a / s , v g s = 0 6 5 d i o d e f o r w a r d v o l t a g e v s d i s = - 1 0 a , v g s = 0 v - 1 . 0 5 v n s v g s = - 1 0 v , i d = - 5 a , r l = 2 v g s = 0 v , v d s = - 1 0 v , f = 1 m h z v s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e r d s ( o n ) m p f d g s 2 . 3 0 . 6 0 + 0 . 1 - 0 . 1 6 . 5 0 + 0 . 1 5 - 0 . 1 5 1 . 5 0 + 0 . 1 5 - 0 . 1 5 0 . 8 0 + 0 . 1 - 0 . 1 4 . 6 0 + 0 . 1 5 - 0 . 1 5 0 . 5 0 + 0 . 1 5 - 0 . 1 5 9 . 7 0 + 0 . 2 - 0 . 2 5 . 3 0 + 0 . 2 - 0 . 2 2 . 3 0 + 0 . 1 - 0 . 1 0 . 5 0 + 0 . 8 - 0 . 7 5 . 5 5 + 0 . 1 5 - 0 . 1 5 2 . 6 5 + 0 . 2 5 - 0 . 1 1 . 5 0 + 0 . 2 8 - 0 . 1 0 . 1 2 7 m a x 3 . 8 0 to-252 u n i t : m m 4 1 gate 2 drain 3 source 4 drain
s m d ty p e w w w . kexin . com . c n 2 m osfe t p - ch an n el m osf et 2s j506s t y p i c a l ch a r a c te r i s i ti c s 40 30 20 10 0 50 100 150 200 ?20 ?16 ?12 ?8 ?4 0 ?4 ?8 ?12 ?16 ?20 ?4 v 0 ?1 ?2 ?3 ?4 ?5 ?3 v ?20 ?16 ?12 ?8 ?4 ?3.5 v ds v = ?10 v pulse test ?10 v tc = ?25 ? c pulse test v = ?2.5 v gs 75 ? c ?5 v ?4.5 v 25 ? c ?6 v ?8 v ?500 ?200 ?100 ?20 ?0.1 ?10 ?2 ?10 ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 ?50 ?5 ?1 ?0.2 ?0.5 ?20 ?50 ta = 25 ? c 1 ms pw = 10 ms (1shot) 10 s 100 s dc operation (tc = 25 ? c) channel dissipation pch (w) case temperature tc ( b c) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d maximum safe operation area operation in this area is limited by r ds(on) drain current i (a) d typical output characteristics drain to source voltage v (v) ds gate to source voltage v (v) gs typical transfer characteristics drain current i (a) d ?2 ?1.6 ?1.2 ?0.8 ?0.4 0 ?4 ?8 ?12 ?16 ?20 pulse test i = ?10 a d ?2 a ?5 a ?1 ?2 ?5 ?10 ?20 ?50 ?100 1000 500 50 20 10 200 100 pulse test ?10 v v = ?4 v gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on) drain to source saturation voltage gate to source voltage v (v) gs static drain to source on state resistance vs. drain current drain current i (a) d drain to source on state resistance r ( ) ? ds(on)
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t p - ch an n el m osf et 2s j506s t y p i c a l ch a r a c te r i s i ti c s 200 160 120 80 40 ?40 0 40 80 120 160 0 ?2,?5 a pulse test i = ?10 a d gs v = ?10 v ?10 a gs v = ?4 v ?2 a 100 10 0.5 2 1 5 20 50 0 5 ? 1 . 0 ? ?0.2 ?0.5 ?1 ?2 ?5 ?10 ?20 25 ? c 75 ? c v = ?10 v ds pulse test tc = ?25 ? c ?5 a static drain to source on state resistance vs. temperature case temperature tc ( b c) r ( ) ds(on) static drain to source on state resistance ? forward transfer admittance vs. drain current drain current i (a) d forward transfer admittance |y | (s) fs 100 50 20 10 ?0.1 ?0.2 ?1 0 ?10 ?20 ?30 ?40 ?50 200 100 50 1000 200 500 100 10 20 5 ?0.1 ?0.2 ?1 ?2 ?5 ?0.5 ?5 20 10 ?10 500 ?20 ?50 ?2 = 1000 2000 5000 ciss coss crss v = 0 f = 1 mhz gs ?20 0 ?10 ?20 ?30 ?40 0 0 ?4 ?8 ?12 ?16 ?20 ?50 8 16 24 32 40 ds v gs v v = ?25 v ?10 v ?5 v dd v = ?5 v ?10 v ?25 v dd i = ?10 a d 50 ?0.5 ?10 r t d(off) t t f d(on) t v = ?10 v, v = ?10 v pw = 10 s, duty < 1 % gs dd di / dt = 50 a / s v = 0, ta = 25 ? c gs body to drain diode reverse recovery time reverse drain current i (a) dr reverse recovery time trr (ns) capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage dynamic input characteristics gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs switching time t (ns) switching characteristics drain current i (a) d
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t . p - ch an n el m osf et 2s j506s t y p i c a l ch a r a c te r i s i ti c s ?20 ?16 ?12 ?8 ?4 0 ?0.4 ?0.8 ?1.2 ?1.6 ?2.0 ?10 v ?5 v pulse test v = 0.5 v gs 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch C c(t) = s (t) ? ch C c ch ? c = 6.25 ? c/w, tc = 25 ? c d = 1 0.5 0.2 0.01 0.02 0.1 0.05 1 shot pulse tc = 25? c pulse width pw (s) normalized transient thermal impedance vs. pulse width reverse drain current vs. source to drain voltage source to drain voltage v (v) sd reverse drain current i (a) dr normalized transient thermal impedance s (t)
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